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| 型號： | 2SK2394 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Junction Silicon FET for Low-Noise HF Amplifier Applications(低噪聲 HF放大器應用的N溝道結型場效應管) |
| 中文描述： | N溝道結硅場效應管，高頻低噪聲放大器的應用（低噪聲高頻放大器應用的?溝道結型場效應管） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 111K |
| 代理商： | 2SK2394 |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
2SK2394
Low-Noise HF Amplifier Applications
Ordering number:EN4839A
22299TS/73094MT (KOTO) BX-1128 No.4839–1/3
0.4
0.95 0.95
1.9
2.9
0
1
2
0
0.16
0 to 0.1
0
1
2
3
1
Specifications
Absolute Maximum Ratings
at Ta = 25C
Package Dimensions
unit:mm
2050A
[2SK2394]
Applications
· AM tuner RF amplifier.
· Low-noise amplifier.
Features
· Large
y
fs
.
· Small Ciss.
· Small-sized package permitting 2SK2394-applied
sets to be made small slim.
· Ultralow noise figure.
C
C
Electrical Characteristics
at Ta = 25C
1 : Source
2 : Drain
3 : Gate
SANYO : CP
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* : The 2SK2394 is classified by I
DSS
as follows : (unit : mA)
Marking : YJ
I
DSS
rank : 5, 6, 7
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| 2SK2394_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Junction Silicon FET Low-Noise HF Amplifi er Applications |
| 2SK2394-6-TB-E | 功能描述:JFET N-CH 15V 50MA CP RoHS:是 類別:分離式半導體產(chǎn)品 >> JFET（結點場效應 系列:- 標準包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應商設備封裝:3-ECSP1006 功率 - 最大:100mW |
| 2SK2394-7-TB-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2SK2395 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low-Noise HF Amp Applications |
| 2SK2395F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 50MA I(D) | SPAK |
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