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參數資料
| 型號： | IRHE57133SE |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 130V V(BR)DSS | 9A I(D) | LLCC |
| 中文描述： | 晶體管| MOSFET的| N溝道| 130V五（巴西）直| 9A條（丁）| LLCC |
| 文件頁數： | 8/8頁 |
| 文件大小： | 120K |
| 代理商： | IRHE57133SE |
IRHE57034
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 1.2 mH
Peak IL = 12A, VGS = 12V
ISD
≤
12A, di/dt
≤
220A/
μ
s,
VDD
≤
60V, TJ
≤
150°C
Footnotes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice.07/02
Case Outline and Dimensions — LCC-18
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