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參數(shù)資料
型號: IRHE57Z30
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | LLCC
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直| 12A條(丁)| LLCC
文件頁數(shù): 8/8頁
文件大小: 120K
代理商: IRHE57Z30
IRHE57034
Pre-Irradiation
8
www.irf.com
Pulse width
300
μ
s; Duty Cycle
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 25V, starting TJ = 25°C, L= 1.2 mH
Peak IL = 12A, VGS = 12V
ISD
12A, di/dt
220A/
μ
s,
VDD
60V, TJ
150°C
Footnotes:
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice.07/02
Case Outline and Dimensions — LCC-18
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