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參數資料
| 型號： | IRHY7G30CMSE |
| 英文描述： | 1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package |
| 中文描述： | 1000V 100kRad高可靠性單N溝道MOSFET的看硬化在TO - 257AA封裝 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 110K |
| 代理商： | IRHY7G30CMSE |
IRHY7G30CMSE
Pre-Irradiation
2
www.irf.com
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
1000
—
Typ
—
1.3
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
15
VGS = 12V, ID = 0.76A
2.5
0.8
—
—
—
—
—
—
4.5
—
25
250
V
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 0.76A
VDS = 800V ,VGS=0V
VDS = 800V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 1.2A
VDS = 300V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
44
6.0
23
25
30
77
150
—
nC
VDD = 500V, ID = 1.2A,
VGS =12V, RG = 7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
377
43
1.4
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
2.5
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
1.2
4.8
1.2
500
690
Test Conditions
—
—
—
—
—
V
ns
nC
T
j
= 25°C, IS = 1.2A, VGS = 0V
Tj = 25°C, IF = 1.2A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
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